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Papers from the Seventh International Workshop on the Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors - Sputter Depth Profiling - Secondary ion mass spectrometry characterization of source-drain junctions for strained silicon channel metal-oxide-semiconductor field-effect transistors

Contributors: Duda, Erika
Lu, Shifeng
Liu, Chun-Li
Jiang, Zhixiong
Lerma, Joe
Barr, Alex
Thean, Aaron
Orlowski, Marius
White, Ted
Contained in: Journal of vacuum science and technology / B New York, NY : Inst Vol. 22, No. 1 (2004), p. 327-331
Journal Title: Journal of vacuum science and technology / B
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ISSN: 2166-2746

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Internes Format
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