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Boron predeposition in silicon using BBr3 : Bor-Vorabscheidung in Silicium mit Hilfe von BBr3

The process of boron predeposition is investigated for different times, temperatures, and doping gas compositions. The experimental conditions leading to the formation on the silicon surface of the boron-rich layer are determined. It is shown that the boron surface concentration in silicon, in equil... Full description

Contained in: Journal of the Electrochemical Society Vol. 125, No. 4 (1978), p. 609-613
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Links: Additional Link (dx.doi.org)
Additional Keywords: ANODISCHE-OXIDATION
BOR
DIFFUSIONSKOEFFIZIENT
DOTIERUNGSVERTEILUNG
SILICIUM
TEMPERATUREINFLUSS
DOI: 10.1149/1.2131510
Notes: Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG
Copyright: (C) Alle Rechte beim Herausgeber
Physical Description: 5 Seiten, 7 Bilder, 24 Quellen
ID (e.g. DOI, URN): 10.1149/1.2131510
PPN (Catalogue-ID): WTI011716967
Note: WTI TEMA DB
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Internes Format
LEADER 02204nma a2200361 c 4500
001 WTI011716967
003 DE-601
005 20190329083333.0
007 cr uuu---uuuuu
008 171222s1978 000 0 und d
024 7 |a 10.1149/1.2131510  |2 doi 
028 5 2 |a TEMA1978_wti_pica 
035 |a (DE-599)WTIE78062523173 
040 |b ger  |c GBVCP 
084 |a 3FF  |a 3FE  |2 FON2006 
245 0 0 |a Boron predeposition in silicon using BBr3  |h Elektronische Ressource =  |b Bor-Vorabscheidung in Silicium mit Hilfe von BBr3 
300 |a Online-Ressource  |a 5 Seiten, 7 Bilder, 24 Quellen 
500 |a Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG 
500 |a Copyright: (C) Alle Rechte beim Herausgeber 
520 |a The process of boron predeposition is investigated for different times, temperatures, and doping gas compositions. The experimental conditions leading to the formation on the silicon surface of the boron-rich layer are determined. It is shown that the boron surface concentration in silicon, in equilibrium with the boron-rich layer,is higher than the solubility value and depends on doping gas composition. Different surface concentrations corresponding to different boron-rich layer compositions can explain the 'anomalous' decrease of the amount of boron entering the silicon, which is observed in particular experimental conditions. In this evaluation both the strong concentration dependence of the boron diffusion coefficient and the translation of the BRL-Si interface have also been taken into account. Finally the rate-determining steps of the transfer of boron into silicon are discussed. 
653 4 |a SILICIUM 
653 4 |a BOR 
653 4 |a DIFFUSIONSKOEFFIZIENT 
653 4 |a DOTIERUNGSVERTEILUNG 
653 4 |a ANODISCHE-OXIDATION 
653 4 |a TEMPERATUREINFLUSS 
773 0 8 |i In  |t Journal of the Electrochemical Society  |g Vol. 125, No. 4 (1978), p. 609-613  |q 125:4<609-613 
856 4 0 |u http://dx.doi.org/10.1149/1.2131510 
912 |a GBV_WTI 
950 |a SILICIUM  |a BOR  |a DIFFUSIONSKOEFFIZIENT  |a DOTIERUNGSPROFIL  |a ANODISCHE OXIDATION  |a TEMPERATURABHAENGIGKEIT  |2 DE-601 
950 |a BORBROMID  |a DOTIERUNG  |2 DE-601 
951 |a AR 
952 |d 125  |j 1978  |e 4  |h 609-613