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Application of the shear cell technique to diffusivity measurements in melts of semiconducting compounds: Ga-Sb

We have developed a shear cell technique for the measurement of diffusivities in molten semiconducting materials. We applied the technique to the Ga-Sb system over a wide range of relative concentrations. In Ga-rich solutions, the diffusion coefficients were found to depend on concentration. Further... Full description

Contained in: Journal of Crystal Growth Vol. 186, No. 4 (1998), p. 511-519
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Links: Additional Link (dx.doi.org)
Additional Keywords: ATOMABSORPTIONSSPEKTROMETRIE
DIFFUSION
DIFFUSIONSKOEFFIZIENT
DREI-FUENF-VERBINDUNG
GALLIUMANTIMONID
KONZENTRATIONSABHAENGIGKEIT
DOI: 10.1016/S0022-0248(97)00823-3
Notes: Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG
Copyright: (C) Alle Rechte beim Herausgeber
Physical Description: 9 Seiten, 19 Quellen
ID (e.g. DOI, URN): 10.1016/S0022-0248(97)00823-3
PPN (Catalogue-ID): WTI03501024X
Note: WTI TEMA DB
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520 |a We have developed a shear cell technique for the measurement of diffusivities in molten semiconducting materials. We applied the technique to the Ga-Sb system over a wide range of relative concentrations. In Ga-rich solutions, the diffusion coefficients were found to depend on concentration. Furthermore, we found evidence for an apparent enhancement of the diffusion caused by the initial shearing process. We show that this additional transport can be corrected for. [Copyright Elsevier B.V. Reproduced with permission.] 
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