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First dc measurements of electrons on liquid helium: the helium-FET

We present the first dc-measurements on a 2-dimensional (2D) electron system floating above a liquid 4He-film which covers a structured metal surface. With our arrangement of a source-, gate-, and drain-electrode a 2-dimensional charge transport is realized in analogy to a field-effect-transistor. T... Full description

Published: New York, Kluwer Academic/Plenum Publishers, 2000
Kongresse: International Symposium on Quantum Fluids and Solids 2000 2000.06.06-2000.06.11 Minneapolis, MN, US
QFS 2000 2000.06.06-2000.06.11 Minneapolis, MN, US
International Symposium on Quantum Fluids and Solids 2000.06.06-2000.06.11 Minneapolis, MN, US
QFS 2000 2000.06.06-2000.06.11 Minneapolis, MN, US
Contained in: Journal of Low Temperature Physics Vol. 121, No. 5-6 (2000), p. 603-608
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ISSN: 0022-2291
Additional Keywords: ELEKTRISCHES-POTENTIAL
ELEKTRONENBEWEGLICHKEIT
ELEKTRONISCHE-ZUSTANDSDICHTE
FELDEFFEKT
FLUESSIGHELIUM
GATE-SPANNUNG
MOS-FET
OBERFLAECHENBESCHAFFENHEIT
RELAXATIONSMETHODE
STROMMESSUNG:ELEKTRISCH
WIRKUNG-ELEKTRISCHER-FELDER
ZWEIDIMENSIONALE-DARSTELLUNG
Notes: Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG
Copyright: (C) Alle Rechte beim Herausgeber
Physical Description: 6 Seiten, 8 Quellen
PPN (Catalogue-ID): WTI038053829
Note: WTI TEMA DB
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Internes Format
LEADER 02924naa a2200469 c 4500
001 WTI038053829
003 DE-601
005 20190330042952.0
008 171222s2000 000 0 und d
028 5 2 |a TEMA2001_wti_pica 
035 |a (DE-599)WTI20010500136 
040 |b ger  |c GBVCP 
084 |a E  |2 FIZTtc 
084 |a 3BB  |a 3BN  |a 3IFE  |a 3FR  |2 FON2006 
245 0 0 |a First dc measurements of electrons on liquid helium: the helium-FET 
264 3 1 |a New York  |b Kluwer Academic/Plenum Publishers  |c 2000 
300 |a 6 Seiten, 8 Quellen 
500 |a Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG 
500 |a Copyright: (C) Alle Rechte beim Herausgeber 
520 |a We present the first dc-measurements on a 2-dimensional (2D) electron system floating above a liquid 4He-film which covers a structured metal surface. With our arrangement of a source-, gate-, and drain-electrode a 2-dimensional charge transport is realized in analogy to a field-effect-transistor. The electrons which are moving along the x-direction due to different dc potentials are directly measured. This dc current, of the order of pA, is strongly dependent on the applied split-gate voltage. So the electrons were laterally confined to a narrow channel between the two gate electrodes. The effective width of the channel is reduced by the gate potential, so that a quasi-1D configuration can be realized. The measured electron current through the split-gate is analyzed and discussed on grounds of reduced dimensionally and 1D electron transport behaviour. 
653 4 |a STROMMESSUNG:ELEKTRISCH 
653 4 |a MOS-FET 
653 4 |a OBERFLAECHENBESCHAFFENHEIT 
653 4 |a ELEKTRISCHES-POTENTIAL 
653 4 |a FELDEFFEKT 
653 4 |a RELAXATIONSMETHODE 
653 4 |a ELEKTRONISCHE-ZUSTANDSDICHTE 
653 4 |a ELEKTRONENBEWEGLICHKEIT 
653 4 |a ZWEIDIMENSIONALE-DARSTELLUNG 
653 4 |a FLUESSIGHELIUM 
653 4 |a GATE-SPANNUNG 
653 4 |a WIRKUNG-ELEKTRISCHER-FELDER 
711 2 |a International Symposium on Quantum Fluids and Solids  |n 2000  |d 2000.06.06-2000.06.11  |c Minneapolis, MN, US 
711 2 |a QFS  |n 2000  |d 2000.06.06-2000.06.11  |c Minneapolis, MN, US 
711 2 |a International Symposium on Quantum Fluids and Solids  |d 2000.06.06-2000.06.11  |c Minneapolis, MN, US 
711 2 |a QFS  |n 2000  |d 2000.06.06-2000.06.11  |c Minneapolis, MN, US 
773 0 8 |i In  |t Journal of Low Temperature Physics  |g Vol. 121, No. 5-6 (2000), p. 603-608  |q 121:5-6<603-608  |x 0022-2291  |x 0022-2291 
912 |a GBV_WTI 
950 |a Strommessung (elektrisch)  |a MOS-FET  |a Oberflächenstruktur  |a elektrisches Potenzial  |a Feldeffekt  |a Relaxationsmethode  |a elektronische Zustandsdichte  |a Elektronenbeweglichkeit  |a zweidimensionale Darstellung  |a Flüssighelium  |a Gate-Spannung  |a Wirkung elektrischer Felder  |2 DE-601 
950 |a Elektronentransporteigenschaft  |a MOS-FET-Bauelement  |a Gate-Elektrode  |2 DE-601 
951 |a AR 
952 |d 121  |j 2000  |e 5-6  |h 603-608