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2.
Article

Nucleation of oxygen precipitates in Czochralski-grown silicon = : Die Nukleation von Sauerstoff-Niederschlaegen in nach der Czochralski-Methode gewachsenen Silizium

for 1st Int. Autumn School 1985. Gettering and Defect Engineering in the Semiconductor Technology. Proc., Garzau, DDR | (1985), p. 174-182
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4.
Article

Anomalous behavior of carbon in silicon = : Anomales Verhalten von Kohlenstoff in Silicium

for 2nd International Autumn Meeting 1987, Gettering and Defect Engineering in the Semiconductor Technology, Garzau, DDR | (1987), p. 112-113
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8.
Electronic Article

Heat-treatment centers in silicon and their g-values : Durch Waermebehandlung in Silicium erzeugte Zentren und ihre g-Werte

for Physica Status Solidi (B) - Basic Research | Vol. 110, No. 1 (1982), p. K89-K92
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9.
Article

Principles of denuded zone formation = : Prinzipien der DZ (denuded zone)-Bildung

for 2nd International Autumn Meeting 1987, Gettering and Defect Engineering in the Semiconductor Technology, Garzau, DDR | (1987), p. 323-328
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10.
Article

The influence of oxygen on the migration of the carbon interstitial defect in silicon = : Der Einfluss von Sauerstoff auf die Wanderung von Kohlenstoff-Zwischengitteratom-Fehlstell...

for 2nd International Autumn Meeting 1987, Gettering and Defect Engineering in the Semiconductor - Technology, Garzau, DDR | (1987), p. 109-111
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