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You are searching the holdings of more than 100 academic libraries: more information
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2.
Article

Characterization of semiconductor silicon using FT-IR spectroscopy = : Charakterisierung von Halbleiter-Silicium durch FT-IR-Spektroskopie

for Proc. of SPIE. Spectroscopic Characterization Techniques for Semiconductor Technology | Vol. 452 (1984), p. 71-78
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3.
Article

Anomalous behavior of carbon in silicon = : Anomales Verhalten von Kohlenstoff in Silicium

for 2nd International Autumn Meeting 1987, Gettering and Defect Engineering in the Semiconductor Technology, Garzau, DDR | (1987), p. 112-113
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5.
Electronic Article

Oxygen solubility in Si melts: influence of boron addition

for Journal of Crystal Growth | Vol. 181, No. 1-2 (1997), p. 41-47
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7.
Article

Oxygen precipitation in high carbon content CZ silicon = : Sauerstoff-Ausscheidung in CZ-Silicium mit hohem Kohlenstoff-Gehalt

for 2nd International Autumn Meeting 1987, Gettering and Defect Engineering in the Semiconductor Technology, Garzau, DDR | (1987), p. 115-118
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8.
Article

Principles of denuded zone formation = : Prinzipien der DZ (denuded zone)-Bildung

for 2nd International Autumn Meeting 1987, Gettering and Defect Engineering in the Semiconductor Technology, Garzau, DDR | (1987), p. 323-328
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9.
Article

The influence of oxygen on the migration of the carbon interstitial defect in silicon = : Der Einfluss von Sauerstoff auf die Wanderung von Kohlenstoff-Zwischengitteratom-Fehlstell...

for 2nd International Autumn Meeting 1987, Gettering and Defect Engineering in the Semiconductor - Technology, Garzau, DDR | (1987), p. 109-111
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10.
Article

Analysis of the high-temperature improvement of CZ-silicon

for EU PVSEC Proceedings | (2000), p. 1201-1205
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