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You are searching the holdings of more than 100 academic libraries: more information
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1.
Electronic Article

Diffusion of impurities in polycrystalline silicon

for Journal of Applied Physics | Vol. 43, No. 1 (1972), p. 83-91
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2.
Electronic Article

Electrical properties of silicon layers implanted with b f-2 molecules

for Journal of Applied Physics | Vol. 43, No. 4 (1972), p. 2006-2008
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3.
Electronic Article

Gallium diffusions into silicon and boron - doped silicon

for Journal of Applied Physics | Vol. 42, No. 10 (1971), p. 3750-3754
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6.
Article

A Doped Surface Two-Phase CCD = : Dotierte Zweiphasen-Oberflaechen-ladungsgekoppelte Anordnung

for Bell System Technical Journal | Vol. 51, No. 8 (1972), p. 1849-1866
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7.
Electronic Article

Solid-solid diffusion of boron in silicon using reactive sputtering

for Japanese Journal of Applied Physics | Vol. 7, No. 11 (1968), p. 1361-1367
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9.
Electronic Article

Defect centers in boron - implanted silicon

for Journal of Applied Physics | Vol. 42, No. 12 (1971), p. 4768-4773
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10.
Electronic Article

Diffusion of Boron from Shallow Ion Implants in Silicon : Mit Ionenimplantation seicht in Silicium diffundiertes Bor

for Journal of the Electrochemical Society | Vol. 119, No. 11 (1972), p. 1570-1576
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