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Boron-Related Defects in Low Temperature Irradiated Silicon

The FTIR absorption studies of boron-doped silicon irradiated at 80 K by 5 MeV electrons have shown the recombination-enhanced migration of the interstitial boron by the Bourgoin-Corbett mechanism. The interaction of diffusing atoms of Bi with one another and with atoms of interstitial oxygen was re... Full description

Published: Zürich, Trans Tech Publications, 2015
Kongresse: Gettering and Defect Engineering in Semiconductor Technology 16 2015.09.20-2015.09.25 Bad Staffelstein, DE
GADEST 16 2015.09.20-2015.09.25 Bad Staffelstein, DE
International Biannual Meeting on Gettering and Defect Engineering in Semiconductor 16th 2015.09.20-2015.09.25 Bad Staffelstein, DE
GADEST 2015 2015.09.20-2015.09.25 Bad Staffelstein, DE
Gettering and Defect Engineering in Semiconductor Technology XVI 2015.09.20-2015.09.25 Bad Staffelstein, DE
Contained in: Solid State Phenomena Vol. 242 (2015), p. 285-289
Fulltext access:
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Links: Additional Link (dx.doi.org)
Additional Link (www.scientific.net)
ISSN: 1662-9779
Additional Keywords: BOR
ELEKTRON
NIEDRIGTEMPERATUR
SAUERSTOFF
SILICIUM
DOI: 10.4028/www.scientific.net/SSP.242.285
Notes: Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG
Copyright: (C) Alle Rechte beim Herausgeber
Physical Description: 5 Seiten
ID (e.g. DOI, URN): 10.4028/www.scientific.net/SSP.242.285
PPN (Catalogue-ID): WTI000025836
Note: WTI TEMA DB
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520 |a The FTIR absorption studies of boron-doped silicon irradiated at 80 K by 5 MeV electrons have shown the recombination-enhanced migration of the interstitial boron by the Bourgoin-Corbett mechanism. The interaction of diffusing atoms of Bi with one another and with atoms of interstitial oxygen was revealed. For as-irradiated samples we observed the appearance of three LVMs at 739.4, 759.6, and 780.9 cm-1, which are attributed to BiBi complex, and the LVM at 923.5 cm-1, which are identified as BiOi complex. [Copyright Trans Tech Publications. Reproduced with permission.] 
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