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Open tube boron isolation process for avoidance of defects = : Borisolationsverfahren bei offenem Rohr zur Vermeidung von Defekten

The open-tube process is usually preferred for efficiency and economic reasons. The open-tube BBr3 process, which is carried out in an oxygenated carrier gas, will produce oxide barriers on isolation openings. This inhibits arsenic outdiffusion and, consequently, results in 'double diffusion' defect... Full description

Contained in: IBM Technical Disclosure Bulletin Vol. 20, No. 6 (1977)
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Additional Keywords: BOR
DIFFUSION
HALBLEITERTECHNOLOGIE
SAUERSTOFF
Notes: Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG
Copyright: (C) Alle Rechte beim Herausgeber
Physical Description: 1 Seite
PPN (Catalogue-ID): WTI012420875
Note: WTI TEMA DB
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Internes Format
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245 0 0 |a Open tube boron isolation process for avoidance of defects =  |b Borisolationsverfahren bei offenem Rohr zur Vermeidung von Defekten 
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520 |a The open-tube process is usually preferred for efficiency and economic reasons. The open-tube BBr3 process, which is carried out in an oxygenated carrier gas, will produce oxide barriers on isolation openings. This inhibits arsenic outdiffusion and, consequently, results in 'double diffusion' defects. These can be overcome by including a bake-out step either immediately after the arsenic capsule subcollector diffusion or after reoxidation and isolation window opening, but preceding the BBr3 process. 
653 4 |a HALBLEITERTECHNOLOGIE 
653 4 |a BOR 
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