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Heat-treatment centers in silicon and their g-values : Durch Waermebehandlung in Silicium erzeugte Zentren und ihre g-Werte

Our EPR work revealed the presence of nine different paramagnetic centers after heat treatments of various silicon materials. The EPR spectra were labelled NL8 to NL10 and NL13 to NL18. Most spectra indicated 2 mm symmetry for the corresponding centers. The absence of resolved hyperfine interactions... Full description

Contained in: Physica Status Solidi (B) - Basic Research Vol. 110, No. 1 (1982), p. K89-K92
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Links: Additional Link (dx.doi.org)
ISSN: 1521-3951
Additional Keywords: AKZEPTOR:FREMDATOM
BOR
DONATOR:FREMDATOM
G-FAKTOR
GITTERFEHLER
HYPERFEINWECHSELWIRKUNG
PARAMAGNETISCHE-RESONANZ
SAUERSTOFF
SILICIUM
WAERMEBEHANDLUNG
DOI: 10.1002/pssb.2221100161
Notes: Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG
Copyright: (C) Alle Rechte beim Herausgeber
Physical Description: 4 Seiten, 1 Bild, 11 Quellen
ID (e.g. DOI, URN): 10.1002/pssb.2221100161
PPN (Catalogue-ID): WTI016023129
Note: WTI TEMA DB
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520 |a Our EPR work revealed the presence of nine different paramagnetic centers after heat treatments of various silicon materials. The EPR spectra were labelled NL8 to NL10 and NL13 to NL18. Most spectra indicated 2 mm symmetry for the corresponding centers. The absence of resolved hyperfine interactions, even in 17.O enriched samples, is very well compatible with the shallow donor character of the centers, as derived from the IR and Hall experiments. The spectra NL8 and NL9 had the strongest intensity, comparable to the concentration of electrically active donor centers. They were only observed in B-doped silicon and hence were believed to correspond with centers which contain a boron atom. Considering the charge states of heat-treatment centers we can understand why no strong spectra were observed in high-resistiviy material. The largest fraction of the main donor center in such material will be neutral. 
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