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Studying Light Soaking of Solar Cells by the Use of Solar Simulator

A review of light soaking of solar cells by the use of commercial IV-characterization instruments is presented. The paper addresses the challenges of studying light induced degradation (LID) using a high intensity light source. Issues related to heating of the cell, temporal intensity instability an... Full description

Published: Zürich, Trans Tech Publications, 2011
Kongresse: Gettering and Defect Engineering in Semiconductor Technology 14 2011.09.25-2011.09.30 Loipersdorf, AT
GADEST 14 2011.09.25-2011.09.30 Loipersdorf, AT
International Biannual Meeting on Gettering and Defect Engineering in Semiconductor XIVth 2011.09.25-2011.09.30 Loipersdorf, AT
GADEST 2011 2011.09.25-2011.09.30 Loipersdorf, AT
Gettering and Defect Engineering in Semiconductor Technology XIV 2011.09.25-2011.09.30 Loipersdorf, AT
Contained in: Solid State Phenomena Vol. 178-179 (2011), p. 435-440
Fulltext access:
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Links: Additional Link (dx.doi.org)
Additional Link (www.scientific.net)
ISSN: 1662-9779
Additional Keywords: BOR
LICHTQUELLE
SAUERSTOFF
SOLARZELLE
DOI: 10.4028/www.scientific.net/SSP.178-179.435
Notes: Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG
Copyright: (C) Alle Rechte beim Herausgeber
Physical Description: 6 Seiten
ID (e.g. DOI, URN): 10.4028/www.scientific.net/SSP.178-179.435
PPN (Catalogue-ID): WTI050525298
Note: WTI TEMA DB
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520 |a A review of light soaking of solar cells by the use of commercial IV-characterization instruments is presented. The paper addresses the challenges of studying light induced degradation (LID) using a high intensity light source. Issues related to heating of the cell, temporal intensity instability and the impact of the irradiance spectrum are discussed. The main focus of the paper is devoted to the degradation of boron-doped Czochralski silicon (Cz-Si) where boron-oxygen related complexes are responsible for a metastable defect formation. Some advantages and limitations concerning the use of IV characteristics to reveal the degradation properties of boron-doped Cz-Si compared to applying minority carrier lifetime techniques are also presented. [Copyright Trans Tech Publications. Reproduced with permission.] 
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