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Light-induced degradation in indium-doped silicon : Lichtinduzierte Degradation in Indium-dotierten Silicium

Light-induced degradation of charge carrier lifetime was observed in indium-doped silicon. After defect formation, an annealing step at 200 °C for 10 min deactivates the defect and the initial charge carrier lifetime is fully recovered. The observed time range of the defect kinetics is similar to th... Full description

Contained in: Physica Status Solidi - Rapid Research Letters Vol. 7, No. 7 (2013), p. 461-464
Journal Title: Physica Status Solidi - Rapid Research Letters
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Links: Additional Link (dx.doi.org)
Additional Keywords: AB-INITIO-BERECHNUNG
AKZEPTOR:FREMDATOM
BORZUSATZ
GALLIUMZUSATZ
INDIUMZUSATZ
LADUNGSTRAEGERLEBENSDAUER
MIKROWELLENMESSVERFAHREN
SAUERSTOFFZUSATZ
SILICIUM
WAERMEBEHANDLUNG:MATERIALBEARBEITUNG
ZEIT-FREQUENZ-BEREICH
DOI: 10.1002/pssr.201307165
Notes: Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG
Copyright: (C) Alle Rechte beim Herausgeber
Physical Description: 4 Seiten, 3 Bilder, 1 Tabelle, 28 Quellen
ID (e.g. DOI, URN): 10.1002/pssr.201307165
PPN (Catalogue-ID): WTI05222421X
Note: WTI TEMA DB
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520 |a Light-induced degradation of charge carrier lifetime was observed in indium-doped silicon. After defect formation, an annealing step at 200 °C for 10 min deactivates the defect and the initial charge carrier lifetime is fully recovered. The observed time range of the defect kinetics is similar to the well known defect kinetics of the light-induced degradation in boron-doped samples. Differences between defect formation in boron- and indium-doped silicon are detected and discussed. A new model based on an acceptor self-interstitial ASi-Sii defect is proposed and established with experimental findings and existing ab-initio simulations. Charge carrier lifetime degradation during light soaking of indium-doped samples with different oxygen concentrations. [Copyright Wiley-VCH Verlag GmbH & Co. KGaA. Reproduced with permission.] 
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