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Association of FeB Pairs under Illumination

It has been found that association of iron-boron (FeB) pairs takes place during illumination of iron contaminated boron-doped silicon. The established FeB pair model is interpreted with respect to the quasi-Fermi level position, the stability condition of FeB pairs and the steady state reaction betw... Full description

Published: Zürich, Trans Tech Publications, 2013
Kongresse: Gettering and Defect Engineering in Semiconductor Technology 15 2013.09.22-2013.09.27 Oxford, GB
GADEST 15 2013.09.22-2013.09.27 Oxford, GB
International Biannual Meeting on Gettering and Defect Engineering in Semiconductor 15th 2013.09.22-2013.09.27 Oxford, GB
GADEST 2013 2013.09.22-2013.09.27 Oxford, GB
Gettering and Defect Engineering in Semiconductor Technology XV 2013.09.22-2013.09.27 Oxford, GB
Contained in: Solid State Phenomena Vol. 205-206 (2013), p. 265-270
Journal Title: Solid State Phenomena
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Links: Additional Link (dx.doi.org)
Additional Link (www.scientific.net)
ISSN: 1662-9779
Additional Keywords: BELEUCHTUNG
LEBENSDAUER
MESSUNG
EISEN
BOR
SILICON:POLYMER
ELEKTRON
FERMI-NIVEAU
STATIONAERER-ZUSTAND
LADUNGSDICHTE
DOI: 10.4028/www.scientific.net/SSP.205-206.265
Notes: Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG
Copyright: (C) Alle Rechte beim Herausgeber
Physical Description: 6 Seiten
ID (e.g. DOI, URN): 10.4028/www.scientific.net/SSP.205-206.265
PPN (Catalogue-ID): WTI053351878
Note: WTI TEMA DB
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520 |a It has been found that association of iron-boron (FeB) pairs takes place during illumination of iron contaminated boron-doped silicon. The established FeB pair model is interpreted with respect to the quasi-Fermi level position, the stability condition of FeB pairs and the steady state reaction between interstitial iron, electrons and boron. At an excess charge carrier density of Δn = 5.4·1014 cm-3, still 5 % of the interstitial iron associates to FeB pairs. [Copyright Trans Tech Publications. Reproduced with permission.] 
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