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Charge Carrier Lifetime Shift Induced by Temperature Variation during a MWPCD Measurement

In this work the temperature of a silicon sample excited by a laser during a time dependent microwave-detected photoconductance decay (MWPCD) measurement was logged. 2 °C temperature increase on the backside of the wafer was observed. Temperature dependent charge carrier lifetime calculations using... Full description

Kongresse: International Conference on Crystalline Photovoltaics 3 2013.03.25-2013.03.27 Hameln, DE
SiliconPV 3 2013.03.25-2013.03.27 Hameln, DE
International Conference on Crystalline Photovoltaics 3rd 2013.03.25-2013.03.27 Hameln, DE
SiliconPV 2013 2013.03.25-2013.03.27 Hameln, DE
Contained in: Energy Procedia (online) Vol. 38 (2013), p. 153-160
Journal Title: Energy Procedia online
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Links: Additional Link (dx.doi.org)
Additional Keywords: TEMPERATURERHOEHUNG
BOR
SAUERSTOFF
LASER
PRODUKTEINFUEHRUNGSZEIT
LAUFZEIT
ERMUEDUNGSLEBENSDAUER
MIKROWELLE
REKOMBINATIONSZENTRUM
SAUERSTOFFGEHALT
SILICIUM
SOLARZELLE
WAFER:HALBLEITERPLAETTCHEN
DOI: 10.1016/j.egypro.2013.07.262
Notes: Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG
Copyright: (C) Alle Rechte beim Herausgeber
Physical Description: 8 Seiten, 12 Quellen
ID (e.g. DOI, URN): 10.1016/j.egypro.2013.07.262
PPN (Catalogue-ID): WTI053937597
Note: WTI TEMA DB
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520 |a In this work the temperature of a silicon sample excited by a laser during a time dependent microwave-detected photoconductance decay (MWPCD) measurement was logged. 2 °C temperature increase on the backside of the wafer was observed. Temperature dependent charge carrier lifetime calculations using the determined temperature characteristic are compared to time dependent MWPCD measurements of a boron-doped wafer with high oxygen content. The time duration to reach the final temperature fits well with the time scale of the fast forming recombination center of the boron-oxygen related defect. Charge carrier lifetime variation due to temperature increase is discussed in view of different defect parameters. [Copyright Elsevier B.V. Reproduced with permission.] 
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