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ASi-Sii-defect Model of Light-induced Degradation in Silicon

The observation of light-induced degradation (LID) in indium-doped silicon has led to the idea of an ASi-Sii-defect responsible for LID. Generation of silicon self interstitials (Sii) leads, in consequence of the ASi-Sii-defect model, to an enhancement or activation of LID, respectively. This was ob... Full description

Kongresse: International Conference on Crystalline Photovoltaics 4 2014.03.25-2014.03.27 's-Hertogenbosch, NL
SiliconPV 4 2014.03.25-2014.03.27 's-Hertogenbosch, NL
International Conference on Crystalline Photovoltaics 4th 2014.03.25-2014.03.27 's-Hertogenbosch, NL
SiliconPV 2014 2014.03.25-2014.03.27 's-Hertogenbosch, NL
Contained in: Energy Procedia (online) Vol. 55 (2014), p. 559-563
Journal Title: Energy Procedia online
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Links: Additional Link (dx.doi.org)
Additional Keywords: INDIUMSILICID
SOLARZELLE
ELEKTRONENBESTRAHLUNG
BOR
GALLIUM
SILICIUM
DOI: 10.1016/j.egypro.2014.08.025
Notes: Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG
Copyright: (C) Alle Rechte beim Herausgeber
Physical Description: 5 Seiten, 21 Quellen
ID (e.g. DOI, URN): 10.1016/j.egypro.2014.08.025
PPN (Catalogue-ID): WTI054084377
Note: WTI TEMA DB
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520 |a The observation of light-induced degradation (LID) in indium-doped silicon has led to the idea of an ASi-Sii-defect responsible for LID. Generation of silicon self interstitials (Sii) leads, in consequence of the ASi-Sii-defect model, to an enhancement or activation of LID, respectively. This was observed several decades ago at the beginning of solar cell investigation for space application. Boron-doped float-zone (FZ) silicon solar cells show LID after electron irradiation, gallium-doped FZ solar cells do not. The literature data is summarized and interpreted in view of the ASi-Sii-defect model. [Copyright Elsevier B.V. Reproduced with permission.] 
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