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Iron-acceptor Pair Kinetics in Compensated n-type Silicon

Iron-acceptor (FeAc) pair association has been studied in compensated n-type silicon. A dynamic approach, based on the charge carrier recombination rates over the Fei trap level, leads to an explanation of the observed FeAc pairing reaction in compensated n-type silicon and extends the understanding... Full description

Kongresse: International Conference on Crystalline Photovoltaics 4 2014.03.25-2014.03.27 's-Hertogenbosch, NL
SiliconPV 4 2014.03.25-2014.03.27 's-Hertogenbosch, NL
International Conference on Crystalline Photovoltaics 4th 2014.03.25-2014.03.27 's-Hertogenbosch, NL
SiliconPV 2014 2014.03.25-2014.03.27 's-Hertogenbosch, NL
Contained in: Energy Procedia (online) Vol. 55 (2014), p. 564-569
Journal Title: Energy Procedia online
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Links: Additional Link (dx.doi.org)
Additional Keywords: KINETIK
EISEN
KONZENTRATIONSVERTEILUNG
REKOMBINATION
DOI: 10.1016/j.egypro.2014.08.026
Notes: Copyright: Metadaten: TEMA, Copyright WTI-Frankfurt eG
Copyright: (C) Alle Rechte beim Herausgeber
Physical Description: 6 Seiten, 18 Quellen
ID (e.g. DOI, URN): 10.1016/j.egypro.2014.08.026
PPN (Catalogue-ID): WTI054084385
Note: WTI TEMA DB
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